Out of stock
$3.26690
Standard Package:
800
Quantity | Unit Price | |
---|---|---|
1 | $3.26690 | |
10 | $2.84220 | |
30 | $2.57628 | |
100 | $2.30349 | |
500 | $2.18000 | |
800 | $2.12643 |
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Request for SQM120N10-3M8_GE3
SQM120N10-3M8_GE3
MOSFET N-CH 100V 120A TO263
Order Code:
CIS1001310
Manufacturer Part No:
SQM120N10-3M8_GE3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Technical Datasheet:
SQM120N10-3M8_GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | Automotive, AEC-Q101, TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263 (D²Pak) |
Base Product Number | SQM120 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 375W (Tc) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7230 pF @ 25 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |