In stock:
2134
$0.07260
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.07260 | |
| 10 | $0.06088 | |
| 30 | $0.05584 | |
| 100 | $0.04959 | |
| 500 | $0.04681 | |
| 1000 | $0.04511 |
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Request for SSM3J325F,LF
SSM3J325F,LF
MOSFET P-CH 20V 2A S-MINI
Order Code:
CIS1165007
Manufacturer Part No:
SSM3J325F,LF
Manufacturer:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Detailed Description:
P-Channel 20 V 2A (Ta) 600mW (Ta) Surface Mount S-Mini
Technical Datasheet:
Buy with Confidence
SSM3J325F,LF Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
| Base Product Number | SSM3J325 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 600mW (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.21.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |