In stock:
7600
$0.06280
Standard Package:
8000
| Quantity | Unit Price | |
|---|---|---|
| 10 | $0.06280 | |
| 100 | $0.05146 | |
| 300 | $0.04574 | |
| 1000 | $0.04148 | |
| 5000 | $0.03634 | |
| 8000 | $0.03470 |
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Request for SSM3J35AMFV,L3F
SSM3J35AMFV,L3F
MOSFET P-CH 20V 250MA VESM
Order Code:
CIS1164841
Manufacturer Part No:
SSM3J35AMFV,L3F
Manufacturer:
Package / Case:
SOT-723
Detailed Description:
P-Channel 20 V 250mA (Ta) 150mW (Ta) Surface Mount VESM
Technical Datasheet:
Buy with Confidence
SSM3J35AMFV,L3F Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSVII |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Base Product Number | SSM3J35 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 150mW (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 150mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.2 nC @ 4 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 42 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.21.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |