In stock:
5
$11.19250
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $11.19250 | |
200 | $4.33374 | |
500 | $4.17928 | |
1000 | $4.10429 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for STB30N65DM6AG
STB30N65DM6AG
AUTOMOTIVE-GRADE N-CHANNEL 650 V
Order Code:
CIS1163840
Manufacturer Part No:
STB30N65DM6AG
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 650 V 28A (Tc) 223W (Tc) Surface Mount D²PAK (TO-263)
Technical Datasheet:
STB30N65DM6AG Information
Mfr | STMicroelectronics |
---|---|
Series | Automotive, AEC-Q101, MDmesh™ DM2 |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D²PAK (TO-263) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 223W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 115mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 4.75V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |