In stock:
1032
$0.98690
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.98690 | |
| 10 | $0.84567 | |
| 50 | $0.77403 | |
| 100 | $0.70257 | |
| 500 | $0.44943 | |
| 1000 | $0.42920 |
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Request for TK10A80E,S4X
TK10A80E,S4X
MOSFET N-CH 800V 10A TO220SIS
Order Code:
CIS1164820
Manufacturer Part No:
TK10A80E,S4X
Manufacturer:
Package / Case:
TO-220-3 Full Pack
Detailed Description:
N-Channel 800 V 10A (Ta) 50W (Tc) Through Hole TO-220SIS
Technical Datasheet:
Buy with Confidence
TK10A80E,S4X Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | π-MOSVIII |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220SIS |
| Base Product Number | TK10A80 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 50W (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |