In stock:
3317
$0.37840
Standard Package:
2000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.37840 | |
| 10 | $0.31426 | |
| 30 | $0.28210 | |
| 100 | $0.25118 | |
| 500 | $0.23166 | |
| 1000 | $0.22250 |
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Request for TK11S10N1L,LQ
TK11S10N1L,LQ
MOSFET N-CH 100V 11A DPAK
Order Code:
CIS1165878
Manufacturer Part No:
TK11S10N1L,LQ
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 100 V 11A (Ta) 65W (Tc) Surface Mount DPAK+
Technical Datasheet:
Buy with Confidence
TK11S10N1L,LQ Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK+ |
| Base Product Number | TK11S10 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 65W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |