In stock:
2438
$0.96910
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.96910 | |
| 10 | $0.81046 | |
| 30 | $0.72237 | |
| 100 | $0.62488 | |
| 500 | $0.58010 | |
| 1000 | $0.56111 |
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Request for TK12A60W,S4VX
TK12A60W,S4VX
MOSFET N-CH 600V 11.5A TO220SIS
Order Code:
CIS1165873
Manufacturer Part No:
TK12A60W,S4VX
Manufacturer:
Package / Case:
TO-220-3 Full Pack
Detailed Description:
N-Channel 600 V 11.5A (Ta) 35W (Tc) Through Hole TO-220SIS
Technical Datasheet:
Buy with Confidence
TK12A60W,S4VX Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | DTMOSIV |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220SIS |
| Base Product Number | TK12A60 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 35W (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |