Out of stock
$5.05120
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $5.05120 | |
| 10 | $4.39606 | |
| 30 | $3.98388 | |
| 100 | $3.56211 | |
| 500 | $3.37168 | |
| 1000 | $3.28833 |
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Request for TK14G65W,RQ
TK14G65W,RQ
MOSFET N-CH 650V 13.7A D2PAK
Order Code:
CIS1164812
Manufacturer Part No:
TK14G65W,RQ
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 650 V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK
Technical Datasheet:
Buy with Confidence
TK14G65W,RQ Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | DTMOSIV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Base Product Number | TK14G65 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 130W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 6.9A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 690µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 300 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |