In stock:
1980
$1.49270
Standard Package:
2000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.49270 | |
| 10 | $1.29940 | |
| 30 | $1.17789 | |
| 100 | $1.05220 | |
| 500 | $0.99697 | |
| 1000 | $0.97220 |
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Request for TK290P65Y,RQ
TK290P65Y,RQ
MOSFET N-CH 650V 11.5A DPAK
Order Code:
CIS1164834
Manufacturer Part No:
TK290P65Y,RQ
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 650 V 11.5A (Tc) 100W (Tc) Surface Mount DPAK
Technical Datasheet:
Buy with Confidence
TK290P65Y,RQ Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | DTMOSV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Base Product Number | TK290P65 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 100W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 450µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 300 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |