In stock:
3
$1.12750
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.12750 | |
| 10 | $0.95781 | |
| 30 | $0.86524 | |
| 100 | $0.75982 | |
| 500 | $0.71224 | |
| 1000 | $0.69172 |
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Request for TK32E12N1,S1X
TK32E12N1,S1X
MOSFET N CH 120V 60A TO-220
Order Code:
CIS1164944
Manufacturer Part No:
TK32E12N1,S1X
Manufacturer:
Package / Case:
TO-220-3
Detailed Description:
N-Channel 120 V 60A (Tc) 98W (Tc) Through Hole TO-220
Technical Datasheet:
Buy with Confidence
TK32E12N1,S1X Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSVIII-H |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Base Product Number | TK32E12 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 98W (Tc) |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 60 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |