In stock:
1461
$0.49140
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.49140 | |
| 10 | $0.40958 | |
| 50 | $0.36860 | |
| 100 | $0.32767 | |
| 500 | $0.30236 | |
| 1000 | $0.29032 |
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Request for TK58E06N1,S1X
TK58E06N1,S1X
MOSFET N-CH 60V 58A TO220
Order Code:
CIS1165882
Manufacturer Part No:
TK58E06N1,S1X
Manufacturer:
Package / Case:
TO-220-3
Detailed Description:
N-Channel 60 V 58A (Ta) 110W (Tc) Through Hole TO-220
Technical Datasheet:
Buy with Confidence
TK58E06N1,S1X Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSVIII-H |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Base Product Number | TK58E06 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 110W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 29A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 30 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |