Out of stock
$7.03400
Standard Package:
2000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $7.03400 | |
| 200 | $2.72005 | |
| 500 | $2.63353 | |
| 1000 | $2.58500 |
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Request for TN0110N3-G-P002
TN0110N3-G-P002
MOSFET N-CH 100V 350MA TO92-3
Order Code:
CIS1305080
Manufacturer Part No:
TN0110N3-G-P002
Manufacturer:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Detailed Description:
N-Channel 100 V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
Technical Datasheet:
Buy with Confidence
TN0110N3-G-P002 Information
| Mfr | Microchip Technology |
|---|---|
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Base Product Number | TN0110 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 1W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |