Out of stock
$1.30310
Standard Package:
5000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.30310 | |
| 10 | $1.09421 | |
| 30 | $0.96495 | |
| 100 | $0.82981 | |
| 500 | $0.72908 | |
| 1000 | $0.70341 |
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Request for TPH1R712MD,L1Q
TPH1R712MD,L1Q
MOSFET P-CH 20V 60A 8SOP
Order Code:
CIS1164727
Manufacturer Part No:
TPH1R712MD,L1Q
Manufacturer:
Package / Case:
8-PowerVDFN
Detailed Description:
P-Channel 20 V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Technical Datasheet:
Buy with Confidence
TPH1R712MD,L1Q Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Base Product Number | TPH1R712 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 78W (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 30A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 10900 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |