In stock:
1840
$0.83370
Standard Package:
5000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.83370 | |
| 10 | $0.67888 | |
| 30 | $0.60143 | |
| 100 | $0.52548 | |
| 500 | $0.47938 | |
| 1000 | $0.45562 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for TPH2R306NH,L1Q
TPH2R306NH,L1Q
MOSFET N-CH 60V 60A 8SOP
Order Code:
CIS1164726
Manufacturer Part No:
TPH2R306NH,L1Q
Manufacturer:
Package / Case:
8-PowerVDFN
Detailed Description:
N-Channel 60 V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Technical Datasheet:
Buy with Confidence
TPH2R306NH,L1Q Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Base Product Number | TPH2R306 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 1.6W (Ta), 78W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 30 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |