Out of stock
$1.93480
Standard Package:
5000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.93480 | |
| 10 | $1.88972 | |
| 30 | $1.85315 | |
| 100 | $1.82568 |
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Request for TPN1R603PL,L1Q
TPN1R603PL,L1Q
MOSFET N-CH 30V 80A 8TSON
Order Code:
CIS1164836
Manufacturer Part No:
TPN1R603PL,L1Q
Manufacturer:
Package / Case:
8-PowerVDFN
Detailed Description:
N-Channel 30 V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Datasheet:
Buy with Confidence
TPN1R603PL,L1Q Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Base Product Number | TPN1R603 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 104W (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 15 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |