Out of stock
$1.27830
Standard Package:
2000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.27830 | |
| 10 | $1.08361 | |
| 30 | $0.97688 | |
| 100 | $0.85633 | |
| 500 | $0.80226 | |
| 1000 | $0.77759 |
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Request for VN0106N3-G-P003
VN0106N3-G-P003
MOSFET N-CH 60V 350MA TO92-3
Order Code:
CIS1321156
Manufacturer Part No:
VN0106N3-G-P003
Manufacturer:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Detailed Description:
N-Channel 60 V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
Technical Datasheet:
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VN0106N3-G-P003 Information
| Mfr | Microchip Technology |
|---|---|
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Base Product Number | VN0106 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 1W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 535 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 65 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |